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Updated: Jun 25, 2026

Recapitulation of an Ion Channel IV Curve Using Frequency Components
Published on: February 8, 2011
Position-dependent stochastic diffusion model of ion channel gating
1Department of Physics, University of Adelaide, Adelaide, South Australia, 5005, Australia. svaccaro@physics.adelaide.edu.au
Abstract:
A position-dependent stochastic diffusion model of gating in ion channels is developed by considering the spatial variation of the diffusion coefficient between the closed and open states. It is assumed that a sensor which regulates the opening of the ion channel experiences Brownian motion in a closed region Rc and a transition region Rm, where the dynamics is described by probability densities pc(x,t) and pm(x,t) which satisfy interacting Fokker-Planck equations with diffusion coefficient Dc(x)=Dcexp(gammacx) and Dm(x)=Dmexp(-gammamx). The analytical solution of the coupled equations may be approximated by the lowest frequency relaxation, a short time after the application of a depolarizing voltage clamp, when Dm<
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