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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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Influence of magnetic dopants on the metal-insulator transition in semiconductors

J Teubert1, S A Obukhov, P J Klar

  • 1Institute for Experimental Physics I, Justus-Liebig-University, Giessen, Germany. joerg.teubert@exp1.physik.uni-giessen.de

Physical Review Letters
|March 5, 2009
PubMed

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