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Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
Vanadium oxide sensing layer grown on carbon nanotubes by a new atomic layer deposition process
Marc-Georg Willinger1, Giovanni Neri, Erwan Rauwel
1Department of Chemistry, CICECO, University of Aveiro, 3810-193 Aveiro, Portugal.
Nano Letters
|April 16, 2009
Summary
A novel atomic layer deposition process uniformly coats carbon nanotubes with vanadium oxide, creating high-quality hybrid materials for advanced gas sensors. These sensors exhibit unique electrical responses due to the p-n heterojunction structure.
Area of Science:
- Materials Science
- Nanotechnology
- Chemical Engineering
Background:
- Carbon nanotubes (CNTs) offer high surface area but require functionalization for specific applications.
- Vanadium oxide (VOx) is a promising material for gas sensing due to its redox properties.
- Achieving uniform and conformal coatings on CNTs is challenging.
Purpose of the Study:
- To develop a new atomic layer deposition (ALD) process for homogeneous vanadium oxide coating on carbon nanotubes.
- To produce high surface area hybrid materials with controlled thickness and unprecedented quality.
- To investigate the performance of these ALD-coated CNTs in gas-sensing devices.
Main Methods:
- Utilized a novel atomic layer deposition (ALD) process for vanadium oxide deposition.
- Applied the ALD process to coat both inner and outer surfaces of carbon nanotubes.
- Fabricated gas-sensing devices using the ALD-coated CNTs as the active component.
Main Results:
- Achieved highly conformal vanadium oxide films of controllable thickness on CNTs.
- Produced high surface area hybrid materials with superior uniformity.
- Observed electric responses in gas-sensing devices directly correlated with the p-n heterojunction structure between CNTs and vanadium oxide.
Conclusions:
- The new ALD process enables high-quality, homogeneous vanadium oxide coating on CNTs.
- The resulting hybrid materials are effective active components in gas-sensing devices.
- The observed gas-sensing performance is attributed to the unique p-n heterojunction formed at the interface.

