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Related Experiment Video

Updated: Jun 24, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

A high-temperature single-photon source from nanowire quantum dots.

Adrien Tribu1, Gregory Sallen, Thomas Aichele

  • 1Nanophysics and Semiconductor Group, CEA/CNRS/Université Joseph Fourier, Institut Néel, 25 rue des Martyrs, 38042 Grenoble cedex 9, France.

Nano Letters
|April 16, 2009
PubMed
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We developed a high-temperature single-photon source using quantum dots in nanowires. This nonblinking quantum-dot source operates efficiently up to 220 K, enabling compact and cost-effective photonic devices.

Area of Science:

  • Solid-state physics
  • Quantum optics
  • Nanotechnology

Background:

  • Single-photon sources are crucial for quantum technologies.
  • Existing sources often require cryogenic cooling, limiting practical applications.
  • Quantum dots offer tunable optical properties for photon emission.

Purpose of the Study:

  • To develop a high-temperature, stable single-photon source.
  • To demonstrate efficient single-photon emission from quantum dots at elevated temperatures.
  • To enable practical, cost-effective quantum devices using Peltier cooling.

Main Methods:

  • Growth of ZnSe/CdSe core-shell nanowires using molecular beam epitaxy (MBE) in vapor-liquid-solid (VLS) mode.
  • Fabrication of a two-step nanowire structure for defect-free growth.

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Last Updated: Jun 24, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
09:01

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings

Published on: April 16, 2017

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

  • Characterization of photoluminescence and photon antibunching up to 220 K.

    • Main Results:

    • Intense and highly polarized photoluminescence observed from single quantum dots within nanowires.
    • Efficient photon antibunching demonstrated up to 220 K (473 K).
    • A normalized antibunching dip of at most 36% was maintained at high temperatures.

    Conclusions:

    • Achieved the highest reported operating temperature for a nonblinking quantum-dot single-photon source.
    • Demonstrated the potential for compact and affordable quantum photonic devices using thermoelectric cooling.
    • The nanowire-based quantum dot platform shows promise for robust quantum information processing.