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Updated: Jun 23, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Composition and strain measurements of Ge(Si)/Si(001) islands by HRTEM

J H Lin1, Y Q Wu, S Tang

  • 1Surface Physics Laboratory, National Key Laboratory, Fudan University, Shanghai 200433, China.

Journal of Nanoscience and Nanotechnology
|May 15, 2009
PubMed

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