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Updated: Jun 22, 2026

Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation
Published on: December 21, 2015
Catalytic growth and structural characterization of semiconducting beta-Ga2O3 nanowires
Kyo-Hong Choi1, Kwon-Koo Cho, Ki-Won Kim
1School of Nano and Advanced Materials Engineering, ERI and i-cube Center, Gyeongsang National University, 900 Gazwa-dong, Jinju, Gyeongnam 660-701, Korea.
Abstract:
We have successfully synthesized beta-Ga2O3 nanomaterials with various morphologies, such as wire, rod, belt and sheet-like, through simple thermal evaporation of metal gallium powder in the presence of nickel oxide catalyst. beta-Ga2O3 nanomaterials with different morphology were observed as a function of synthesis time and temperature. In this report, generation sites of the beta-Ga2O3 nanomaterials have been delicately surveyed by FESEM. The growth mechanisms of nanomaterials are distinguished by the view of its generation site. The growth of nanowire follows both VLS and VS mechanism and other kinds of materials such as nanorod, nanobelt and nanosheet follows VS mechanism.

