Related Experiment Video
Updated: Jun 22, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Field-dependent electron emission patterns from individual SWCNTs simulated with a multi-scale algorithm
Weiliang Wang1, Ningsheng Xu, Zhibing Li
1State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, China.
Abstract:
The electron distribution of open-ended single-walled carbon nanotubes (CNTs) with chirality indexes (7,0) and (5,5) in field emission conditions was calculated via a multi-scaled algorithm. The field emission images were produced numerically. It was found that the emission patterns change with the applied macroscopic field. Especially, the symmetry of the emission pattern of the (7,0) carbon nanotube is breaking in the lower field but the breaking is less obvious in the higher field. The magnification factor increases with the applied macroscopic field.
More Related Videos
07:24Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
08:44Measurements of Long-range Electronic Correlations During Femtosecond Diffraction Experiments Performed on Nanocrystals of Buckminsterfullerene
Published on: August 22, 2017
Related Concept Videos
Scanning Electron Microscopy
Fundamental Principles
Accelerated...
Atomic Emission Spectroscopy: Overview
Atomic Emission Spectroscopy: Instrumentation
Atomic Emission Spectroscopy: Lab
The de Broglie Wavelength
Atomic Spectroscopy: Absorption, Emission, and Fluorescence