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Updated: Jun 22, 2026
Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
Published on: April 24, 2014
Design and characterization of a nonuniform linear vertical-cavity surface-emitting laser array with a Gaussian
Jinjiang Cui1, Yongqiang Ning, Yan Zhang
1Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics, and Physics, Chinese Academy of Sciences, 16 Eastern South Lake Road, Changchun 130033, China.
Abstract:
A 980 nm bottom-emitting vertical-cavity surface-emitting laser array with a nonuniform linear arrangement is reported to realize emission with a Gaussian far-field distribution. This array is composed of five symmetrically arranged elements of 200 microm, 150 microm, and 100 microm diameter, with center spacing of 300 microm and 250 microm, respectively. An output power of 880 mW with a high power density of 1 kW/cm2 is obtained. The divergence angle is below 20 degrees in the range of operating current from 0 A to 6 A. The theoretical simulation of the near-field and the far-field distribution is in good agreement with the experimental result. The comparison between this nonuniform linear array, the single device, and the conventional two-dimensional array is carried out to demonstrate the good performance of the linear array.
