Large-area, three-state, binary amplitude and binary phase vertical-cavity multiple quantum well electroabsorption...

Area of Science:

• Optoelectronics
• Semiconductor Devices
• Photonics

Background:

• Multiple quantum wells (MQWs) are crucial for advanced optical modulation.
• Developing efficient and large-scale optical modulator arrays is essential for optical communication and signal processing.

Purpose of the Study:

• To design and characterize a novel GaAs MQW-based optical modulator array.
• To evaluate the device's performance as a ternary modulator for both amplitude and phase modulation.
• To assess the potential for low-voltage operation.

Main Methods:

• Fabrication of a 64-pixel GaAs MQW optical modulator array.
• Characterization of reflectance and phase shift across different voltage states.
• Analysis of device performance metrics including contrast ratio and uniformity.

Main Results:

• The array demonstrated two high-reflectance states with a ~180-degree phase difference for binary phase modulation.
• A third low-reflectance state was achieved for amplitude modulation.
• The device operates effectively with a low voltage swing of 5V.
• Uniformity and contrast ratio were evaluated for the 2mm x 5mm active area.

Conclusions:

• The GaAs MQW optical modulator array is suitable for ternary modulation applications.
• The device's low voltage requirement and dual functionality make it a promising component for optical systems.
• Further development could lead to more complex optical processing functionalities.