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Dual-wavelength generation by vertical external cavity surface-emitting laser
Optics Express
|June 25, 2009
Summary
This study reports a high-power dual-wavelength laser. It achieved 0.75 W at 966 nm and 1.38 W at 1047 nm, demonstrating efficient operation.
Area of Science:
- Optics and Photonics
- Semiconductor Lasers
- Materials Science
Background:
- Vertical external-cavity surface-emitting lasers (VECSELs) offer high power and beam quality.
- Dual-wavelength emission is desirable for applications like spectroscopy and nonlinear optics.
- AlGaInAs/GaAs material systems are suitable for near-infrared laser applications.
Purpose of the Study:
- To report a high-power dual-wavelength AlGaInAs/GaAs laser.
- To demonstrate efficient operation of a VECSEL geometry.
- To investigate the performance of a laser with separated active regions and an optical filter.
Main Methods:
- Growth of AlGaInAs/GaAs heterostructures using molecular beam epitaxy (MBE).
- Fabrication of a vertical external-cavity surface-emitting laser (VECSEL) device.
- Incorporation of an optical long-wave-pass filter between active regions.
- Characterization of output power and wavelength at various operating conditions.
Main Results:
- Achieved dual-wavelength emission at approximately 966 nm and 1047 nm.
- Maximum output power of 0.75 W at 966 nm and 1.38 W at 1047 nm.
- Output power demonstrated at a pump power of 21.2 W and 15 degrees C.
- Optical filter effectively prevented short-wavelength absorption in the long-wavelength gain region.
Conclusions:
- Demonstrated a high-power dual-wavelength AlGaInAs/GaAs VECSEL.
- The integrated optical filter is effective in enabling efficient dual-wavelength operation.
- The device shows potential for applications requiring multiple laser wavelengths.
