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Updated: Jun 22, 2026

Patterning via Optical Saturable Transitions - Fabrication and Characterization

Patterning via Optical Saturable Transitions - Fabrication and Characterization

Published on: December 11, 2014

Binary mask optimization for forward lithography based on the boundary layer model in coherent systems.

Xu Ma¹, Gonzalo R Arce

¹Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716, USA. maxu@udel.edu

Journal of the Optical Society of America. A, Optics, Image Science, and Vision

|July 2, 2009

Summary

This summary is machine-generated.

This study introduces a new optical proximity correction (OPC) method for subwavelength lithography, accounting for thick-mask effects. The boundary layer model simplifies calculations for improved accuracy in advanced semiconductor manufacturing.

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Multi-step Variable Height Photolithography for Valved Multilayer Microfluidic Devices

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Last Updated: Jun 22, 2026

Patterning via Optical Saturable Transitions - Fabrication and Characterization

Patterning via Optical Saturable Transitions - Fabrication and Characterization

Published on: December 11, 2014

Multi-step Variable Height Photolithography for Valved Multilayer Microfluidic Devices

Multi-step Variable Height Photolithography for Valved Multilayer Microfluidic Devices

Published on: January 27, 2017

Area of Science:

Semiconductor manufacturing
Advanced lithography techniques
Computational optics

Background:

Current optical proximity correction (OPC) methods often assume thin masks, which is inadequate for subwavelength lithography.
Thick-mask effects significantly impact pattern fidelity as critical dimensions shrink.
Existing OPC models struggle with accuracy in the subwavelength regime due to neglecting mask thickness.

Purpose of the Study:

To develop advanced model-based forward binary mask optimization methods.
To incorporate thick-mask effects into OPC for coherent imaging systems.
To improve the accuracy of OPC in the subwavelength regime.

Main Methods:

Utilized the boundary layer (BL) model to characterize thick-mask effects.
Developed a model-based OPC approach simplifying thick-mask considerations.
Simulated the performance of the proposed OPC method.

Main Results:

The proposed method effectively accounts for thick-mask effects in OPC.
The boundary layer model provides a simplified yet effective approach to thick-mask modeling.
Illustrative simulations demonstrate the algorithm's capabilities.

Conclusions:

The developed model-based OPC method offers a viable solution for subwavelength lithography challenges.
The BL model presents a practical approach for integrating thick-mask effects into OPC.
Further research can explore the advantages and limitations for broader applications.