Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Epidemiology of Adolescent Gaming Disorder: A Six-Year Population-Based Longitudinal Study (2019-2024).

European psychiatry : the journal of the Association of European Psychiatrists·2026
Same author

Acceptance of online therapy for children and adolescents with digital media use disorders: perspectives from child and adolescent psychiatrists and psychotherapists in Germany.

European child & adolescent psychiatry·2025
Same author

Toward Programmable Quantum Processors Based on Spin Qubits with Mechanically Mediated Interactions and Transport.

Physical review letters·2024
Same author

Linear response theory of open systems with exceptional points.

Nature communications·2022
Same author

Quantum-inspired multicore optical fiber.

Optics letters·2022
Same author

Giant sponge grounds of Central Arctic seamounts are associated with extinct seep life.

Nature communications·2022
Same journal

Gaussian-modulated continuous-variable quantum key distribution over 60 km fiber using an integrated silicon photonic receiver.

Optics letters·2026
Same journal

E2E-OCT: end-to-end joint learning model using optical coherence tomography images for vocal cord leukoplakia diagnosis.

Optics letters·2026
Same journal

Holographic generation of panoramic 3D scenes by concave ellipsoidal mirror reflection.

Optics letters·2026
Same journal

Dual-pilot phase recovery with pair-wise maximum-ratio combining for coherent PONs.

Optics letters·2026
Same journal

Mapping the whispering gallery modes of a CaF<sub>2</sub> disk resonator with half-tapered fibers to estimate the fundamental mode volume.

Optics letters·2026
Same journal

Quantitative estimation of deep-subwavelength scale via dark-field scattering axial energy concentration decay profiles.

Optics letters·2026
See all related articles

Related Experiment Video

Updated: Jun 22, 2026

Fabrication of Nanopillar-Based Split Ring Resonators for Displacement Current Mediated Resonances in Terahertz Metamaterials
10:28

Fabrication of Nanopillar-Based Split Ring Resonators for Displacement Current Mediated Resonances in Terahertz Metamaterials

Published on: March 23, 2017

Second-harmonic generation from split-ring resonators on a GaAs substrate.

F B P Niesler1, N Feth, S Linden

  • 1Institut for Angewandte Physik, DFG-Center for Functional Nanostructures, Universität Karlsruhe, Karlsruhe, Germany. fabian.niesler@physik.uni-karlsruhe.de

Optics Letters
|July 3, 2009
PubMed
Summary
This summary is machine-generated.

We explored second-harmonic generation in gold split-ring resonators on GaAs. Our findings reveal a specific nonlinear optical effect arising from the interaction between resonator fields and the GaAs substrate.

More Related Videos

Stimulated Stokes and Antistokes Raman Scattering in Microspherical Whispering Gallery Mode Resonators
12:21

Stimulated Stokes and Antistokes Raman Scattering in Microspherical Whispering Gallery Mode Resonators

Published on: April 4, 2016

Multiplex Chemical Imaging Based on Broadband Stimulated Raman Scattering Microscopy
09:57

Multiplex Chemical Imaging Based on Broadband Stimulated Raman Scattering Microscopy

Published on: July 25, 2022

Related Experiment Videos

Last Updated: Jun 22, 2026

Fabrication of Nanopillar-Based Split Ring Resonators for Displacement Current Mediated Resonances in Terahertz Metamaterials
10:28

Fabrication of Nanopillar-Based Split Ring Resonators for Displacement Current Mediated Resonances in Terahertz Metamaterials

Published on: March 23, 2017

Stimulated Stokes and Antistokes Raman Scattering in Microspherical Whispering Gallery Mode Resonators
12:21

Stimulated Stokes and Antistokes Raman Scattering in Microspherical Whispering Gallery Mode Resonators

Published on: April 4, 2016

Multiplex Chemical Imaging Based on Broadband Stimulated Raman Scattering Microscopy
09:57

Multiplex Chemical Imaging Based on Broadband Stimulated Raman Scattering Microscopy

Published on: July 25, 2022

Area of Science:

  • Nonlinear optics
  • Plasmonics
  • Solid-state physics

Background:

  • Second-harmonic generation (SHG) is a key nonlinear optical process.
  • Split-ring resonators (SRRs) exhibit strong plasmonic field enhancement.
  • Gallium arsenide (GaAs) is a technologically important semiconductor with significant nonlinear optical properties.

Purpose of the Study:

  • To investigate SHG from SRRs on a GaAs substrate.
  • To identify the specific contributions to SHG from the interplay between SRR local fields and GaAs nonlinear susceptibility.
  • To validate experimental findings with theoretical modeling.

Main Methods:

  • Fabrication of gold split-ring resonators on crystalline GaAs substrates.
  • Systematic variation of SRR orientation relative to incident light polarization and GaAs crystallographic axes.
  • Optical characterization of second-harmonic generation.
  • Theoretical modeling of nonlinear optical response.

Main Results:

  • Unambiguous identification of a nonlinear optical contribution.
  • Demonstration of the interplay between plasmonic local fields and the bulk GaAs second-order nonlinear-susceptibility tensor.
  • Experimental results show good agreement with theoretical predictions.

Conclusions:

  • The study successfully isolates and identifies a specific nonlinear optical mechanism in the SRR-GaAs system.
  • This work provides a deeper understanding of nonlinear phenomena at the interface of plasmonic nanostructures and nonlinear optical substrates.
  • The findings have implications for designing advanced nonlinear optical devices.