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Published on: March 19, 2016
Design of high efficiency multi-GHz SiGe HBT electro-optic modulator
Shengling Deng1, Z Rena Huang, J F McDonald
1Department of Electrical, Computer, and System Engineering, Rensselaer Polytechnic Institute, NY 12180, USA.
Abstract:
We design and theoretically analyze a heterojunction bipolar transistor (HBT) electro-optic (EO) modulator with a composition graded SiGe base. The waveguide has a large cross-section of 1 microm for ease of fiber alignment. At a base-emitter bias of V BE = 2.5 V, a pi-phase shift requires 74.5 microm interaction length for TM polarization at lambda = 1.55 microm. The total optical attenuation is 3.9 dB to achieve a pi-phase shift in this condition. This device is expected to operate at a switching speed of 2.4 GHz.
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