Optically pumped ultrashort cavity In(1-x) Ga(x) As(y) P(1-y) lasers: picosecond operation between 0.83 and 1.59...

Area of Science:

• Materials Science
• Optoelectronics
• Semiconductor Physics

Background:

• Ultrashort-cavity lasers are crucial for high-speed optical communications and sensing.
• Thin-film semiconductor lasers offer miniaturization and integration potential.

Purpose of the Study:

• To investigate the lasing characteristics of ultrashort-cavity, thin-film lasers based on Indium Gallium Arsenide Phosphide (InGaAsP).
• To explore the tunability and wavelength range achievable with different InGaAsP compositions.

Main Methods:

• Fabrication of ultrashort-cavity, thin-film lasers using five distinct InGaAsP compositions, including InP and In(0.53)Ga(0.47)As.
• Optical pumping using 1-picosecond (psec) pulses from a mode-locked dye laser.
• Characterization of lasing wavelengths and output pulse durations.

Main Results:

• Achieved lasing across a wide spectral range from 0.83 to 1.59 micrometers.
• Observed numerous lasing wavelengths with fine line-to-line separations below 10 nanometers (nm).
• Measured a 6-psec output pulse duration at a wavelength of 1.16 micrometers.

Conclusions:

• Ultrashort-cavity, thin-film InGaAsP lasers are effective for generating tunable emission over a broad spectral range.
• The precise wavelength control and short pulse durations highlight their potential for advanced photonic devices.