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A fast, direct x-ray detection charge-coupled device.

P Denes1, D Doering, H A Padmore

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Summary
This summary is machine-generated.

A new charge-coupled device (CCD) detector offers high-speed readout and excellent detection efficiency across a wide spectrum. This advanced silicon detector enables faster data acquisition for scientific imaging applications.

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Area of Science:

  • Semiconductor device physics
  • Detector technology
  • Scientific instrumentation

Background:

  • Traditional charge-coupled devices (CCDs) face limitations in readout speed and detection efficiency.
  • High-resistivity silicon is a promising material for advanced detector fabrication.
  • Optimizing detector performance requires careful consideration of material properties and readout architecture.

Purpose of the Study:

  • To design and fabricate a high-speed, high-performance charge-coupled device (CCD) detector.
  • To achieve efficient detection across a broad spectral range, from infrared to X-rays.
  • To enable rapid data acquisition for demanding scientific imaging applications.

Main Methods:

  • Fabrication of thick (up to 600 microm) CCDs on high-resistivity silicon.
  • Implementation of a fully depleted silicon structure for enhanced detection efficiency.
  • Utilizing a large number of parallel output ports for high readout speeds (200 Mpixels/s).
  • Development of custom 16-channel readout integrated circuits with 15-bit dynamic range.
  • Integration with a gate array-controlled data acquisition system for image framing and clocking.

Main Results:

  • Successful design and fabrication of a CCD capable of 200 Mpixels/s readout.
  • Achieved full depletion of thick silicon, ensuring good infrared to X-ray detection efficiency.
  • Demonstrated a small point spread function for precise imaging.
  • Integrated custom readout ICs providing 15-bit dynamic range for high-quality analog performance.

Conclusions:

  • The developed CCD technology offers a significant advancement in high-speed, high-efficiency scientific imaging.
  • The combination of thick, fully depleted silicon and parallel readout architecture enables superior performance.
  • This detector is well-suited for applications requiring rapid acquisition of high-quality data across a wide spectral range.