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Related Concept Videos

Inductively Coupled Plasma Atomic Emission Spectroscopy: Instrumentation01:26

Inductively Coupled Plasma Atomic Emission Spectroscopy: Instrumentation

Inductively coupled plasma (ICP) is the common plasma source used in atomic emission spectroscopy (AES), a technique that detects and analyzes various elements in a sample. This method is often called inductively coupled plasma atomic emission spectroscopy (ICP-AES).
There are three main types of inductively coupled plasma atomic emission spectroscopy  (ICP-AES) instruments: sequential, simultaneous multichannel, and Fourier transform instruments, with the latter being less commonly used.

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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
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InGaAs/GaAs multiquantum-well electroabsorption modulator with integrated waveguide.

U Das, P R Berger, P K Bhattacharya

    Optics Letters
    |September 11, 2009
    PubMed
    Summary
    This summary is machine-generated.

    Researchers developed a novel integrated guided-wave modulator using advanced epitaxial regrowth and ion-milling. This device utilizes electroabsorption in InGaAs/GaAs quantum wells for efficient optical modulation with low insertion and transmission losses.

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    Area of Science:

    • Optoelectronics
    • Materials Science
    • Semiconductor Devices

    Background:

    • Integrated optical modulators are crucial for high-speed data transmission.
    • Achieving low loss and high-speed modulation in monolithic devices remains a challenge.

    Purpose of the Study:

    • To develop a monolithically integrated guided-wave modulator.
    • To utilize field-enhanced electroabsorption in strained-layer multiquantum wells for modulation.
    • To characterize the performance of the integrated modulator.

    Main Methods:

    • Monolithic integration using molecular-beam epitaxial regrowth.
    • Ion-milling techniques for device fabrication.
    • Employing In-doped GaAs and GaAs/In(0.34)Ga(0.66)As strained-layer multiquantum wells.

    Main Results:

    • Achieved a guided-wave modulator with 0.9 dB insertion loss.
    • Demonstrated transmission loss of less than or equal to 1 dB/cm in the guides.
    • Characterized temporal response with a 115 psec rise time for similar photodiodes.

    Conclusions:

    • The developed monolithically integrated guided-wave modulator shows promising performance for optoelectronic applications.
    • The use of InGaAs/GaAs strained-layer multiquantum wells enables efficient field-enhanced electroabsorption.
    • The low insertion and transmission losses, combined with fast temporal response, highlight the potential of this technology.