Memory effects based on random networks of single-walled carbon nanotubes

We have fabricated memory devices based on random networks of single-walled carbon nanotubes (SWNTs) on a glass substrate. The characteristics of the nonvolatile memory were investigated as a function of gate voltage, pulse time, and temperature. The program/erase window was greater than approximately 3.2 V. The gate voltage sensitivity of the erase speed was greater ( approximately 1.9 times) than that of the program speed. The activation energy was about 0.273 eV. The mechanism could be explained from the polarization of water molecules, and may provide an important insight into the program/erase operation of memory devices. We have also discussed a fast erase speed due to a work function difference and oxide trapped charges.