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Interlayer-Free Ferroelectric Transistors via Depletion Charge Boosting in Oxide Channel for Neuromorphic
Jae Seong Han1, Subi Choi1, Seok Gyu Hong1
1School of Electrical and Electronic Engineering, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
ACS Applied Materials & Interfaces
|July 17, 2026
Summary
Oxide semiconductors in ferroelectric field-effect transistors (FeFETs) show improved switching via a novel Ar+ plasma treatment. This depletion charge boosting method enhances FeFET performance for neuromorphic computing applications.
Area of Science:
- Materials Science
- Semiconductor Physics
- Device Engineering
Background:
- Oxide semiconductors are promising for ferroelectric field-effect transistors (FeFETs) due to CMOS compatibility.
- Intrinsic hole deficiency in oxides hinders complete ferroelectric polarization switching.
- Effective channel engineering strategies for oxide-based FeFETs are limited.
Purpose of the Study:
- To demonstrate a depletion charge boosting method for oxide channel FeFETs.
- To overcome the limitations of hole deficiency in oxide semiconductors for FeFETs.
- To enhance the performance of indium-gallium oxide (IGO) based FeFETs.
Main Methods:
- Utilized in situ Ar+ plasma treatment during atomic layer deposition of the indium-gallium oxide (IGO) channel.
- Optimized plasma treatment conditions (300 W for 60 s).
- Engineered IGO/zirconium-doped HfO2 (HZO) heterostructures.
Main Results:
- Plasma-induced ionized oxygen vacancies in IGO acted as depletion charges, compensating for negative bound charges in HZO.
- Achieved an improved memory window of 1.612 V.
- Demonstrated potentiation/depression cycling up to 5120 pulses and stable multi-level retention for 64 states.
Conclusions:
- The depletion charge boosting method effectively enhances oxide channel FeFET performance.
- Engineered IGO/HZO FeFETs show significant improvements in memory window, endurance, and retention.
- This technology offers a pathway for neuromorphic applications using oxide-based FeFETs.
Keywords:
charge compensationdepletion charge boostingferroelectric field effect transistorsindium−gallium oxidesinterlayer-freezirconium-doped hafnium oxidesMore Related Videos
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