Examination of DFT and TDDFT methods I
1Department of Chemistry, Yale University, New Haven, Connecticut 06520-8107, USA.
The Journal of Physical Chemistry. A
|September 18, 2009
Summary
Density Functional Theory (DFT) and Time-Dependent DFT (TDDFT) methods were analyzed for ethene's excited states. TDDFT underestimates excitation energy due to HOMO-LUMO degeneracy, impacting charge transfer states.
Area of Science:
- Computational Chemistry
- Quantum Chemistry
- Theoretical Chemistry
Background:
- Density Functional Theory (DFT) and Time-Dependent DFT (TDDFT) are widely used for electronic structure calculations.
- Molecular Orbital (MO) theory and the Quantum Theory of Atoms in Molecules (QT-AIM) provide frameworks for understanding electronic properties.
Purpose of the Study:
- To investigate the behavior of DFT and TDDFT methods in describing the ground and excited states of ethene.
- To clarify the influence of electron correlation and MO occupation numbers on calculated properties.
- To explain the underestimation of excitation energies in TDDFT for specific excited states.
Main Methods:
- Application of DFT and TDDFT within MO theory.
- Utilizing the QT-AIM framework for analysis.
- Detailed investigation of the ground and pi --> pi* excited states of ethene.
Main Results:
- DFT methods incorporate electron correlation by modifying MO energies and electron density distributions.
- MO occupation numbers explain discrepancies in delocalization indices (DIs) between DFT and conventional correlated wave functions.
- TDDFT significantly underestimates excitation energies for ethene's pi --> pi* adiabatic excited states.
Conclusions:
- The underestimation of excitation energy by TDDFT in ethene is linked to the degeneracy of the Highest Occupied Molecular Orbital (HOMO) and the Lowest Unoccupied Molecular Orbital (LUMO).
- This degeneracy represents a specific case of charge transfer (CT) excited states, highlighting a limitation of TDDFT in such scenarios.
- Understanding these aspects is crucial for accurate electronic structure calculations and predicting excited-state properties.
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