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Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Related Experiment Video

Updated: Jun 20, 2026

Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy
08:48

Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy

Published on: November 22, 2019

Frequency-modulation mode locking of a semiconductor laser.

R Nagar, D Abraham, N Tessler

    Optics Letters
    |September 29, 2009
    PubMed
    Summary
    This summary is machine-generated.

    We achieved frequency modulation mode locking in a semiconductor laser. This resulted in 24-picosecond pulses at a 1.5 GHz repetition rate, advancing laser technology.

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    Last Updated: Jun 20, 2026

    Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy
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    Published on: November 22, 2019

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    Area of Science:

    • Optics and Photonics
    • Semiconductor Lasers
    • Mode Locking

    Background:

    • Mode locking is crucial for generating ultrashort laser pulses.
    • Semiconductor lasers offer compact and efficient light sources.
    • Extended-cavity designs enhance laser performance and tunability.

    Purpose of the Study:

    • To demonstrate frequency modulation (FM) mode locking in an extended-cavity semiconductor laser.
    • To investigate the performance of a tunable distributed Bragg reflector (DBR) gain medium.
    • To generate and characterize ultrashort optical pulses.

    Main Methods:

    • Utilized an extended-cavity semiconductor laser.
    • Incorporated a tunable distributed Bragg reflector (DBR) gain medium.
    • Employed FM mode locking techniques.

    Main Results:

    • Successfully achieved FM mode locking.
    • Generated optical pulses with a duration of 24 picoseconds (ps).
    • Obtained a high repetition rate of 1.5 gigahertz (GHz).

    Conclusions:

    • FM mode locking is effective in extended-cavity semiconductor lasers.
    • The tunable DBR gain medium enables efficient pulse generation.
    • This work contributes to the development of high-repetition-rate, short-pulse semiconductor lasers.