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Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

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Compact, high-speed and power-efficient electrooptic plasmonic modulators.

Wenshan Cai¹, Justin S White, Mark L Brongersma

¹Geballe Laboratory for Advanced Materials, Stanford University, 476 Lomita Mall, Stanford, California 94305, USA.

|October 16, 2009

Summary

This summary is machine-generated.

We designed CMOS-compatible electrooptic plasmonic modulators for chip-scale photonic circuits. These modulators achieve high-speed operation (>100 GHz) with low power consumption, meeting future CMOS modulator requirements.

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Area of Science:

Photonics and Materials Science
Integrated Optics
Nanophotonics

Background:

CMOS-compatible electrooptic plasmonic modulators are crucial for advanced chip-scale photonic circuits.
Existing modulators face challenges in achieving high-speed operation, low power consumption, and on-chip integration.

Purpose of the Study:

To investigate design and optimization protocols for CMOS-compatible electrooptic plasmonic modulators.
To enable free-space coupling and on-chip integration for next-generation photonic circuits.

Main Methods:

Detailed design and optimization of electrooptic plasmonic modulator structures.
Utilizing metallic components for simultaneous electrical and optical functions.
Leveraging resonance-enhanced nonlinear interactions and submicrometer footprints.

Main Results:

Achieved high-speed operation exceeding 100 GHz.
Demonstrated a modulation depth greater than 3 dB.
Obtained moderate insertion loss below 3 dB.
Required a low swing voltage of approximately 1 V.
Exhibited low power dissipation of approximately 1 fJ/bit.

Conclusions:

The proposed electrooptic plasmonic modulators meet stringent requirements for future CMOS applications.
The designs are feasible with current materials and lithographic techniques.
These devices represent a significant advancement for high-performance chip-scale photonic circuits.