Related Experiment Video
Updated: Jun 19, 2026

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
Published on: September 14, 2018
Ultrahigh-vacuum third-order spherical aberration (Cs) corrector for a scanning transmission electron microscope
Kazutaka Mitsuishi1, Masaki Takeguchi, Yukihito Kondo
1High-Voltage Electron Microscopy Station, National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305-0003, Japan. Mitsuishi.Kazutaka@nims.go.jp
Abstract:
Initial results from an ultrahigh-vacuum (UHV) third-order spherical aberration (Cs) corrector for a dedicated scanning transmission electron microscopy, installed at the National Institute for Materials Science, Tsukuba, Japan, are presented here. The Cs corrector is of the dual hexapole type. It is UHV compatible and was installed on a UHV column. The Ronchigram obtained showed an extension of the sweet spot area, indicating a successful correction of the third-order spherical aberration Cs. The power spectrum of an image demonstrated that the resolution achieved was 0.1 nm. A first trial of the direct measurement of the fifth-order spherical aberration C5 was also attempted on the basis of a Ronchigram fringe measurement.
Related Concept Videos
Scanning Electron Microscopy
Fundamental Principles
Accelerated...
Transmission Electron Microscopy
Electron Microscope Tomography and Single-particle Reconstruction
Electron Tomography
Electron tomography can be performed either in TEM or STEM (scanning transmission...
