Four-wavelength Bragg mirror using GaAs/AlAs

Area of Science:

• Materials Science
• Optoelectronics
• Semiconductor Physics

Background:

• Bragg mirrors are crucial optical components.
• Achieving high reflectivity across multiple spectral bands is challenging.
• Gallium Arsenide/Aluminum Arsenide (GaAs/AlAs) heterostructures are well-suited for optical applications.

Purpose of the Study:

• To design and fabricate a GaAs/AlAs Bragg mirror.
• To achieve high reflectivity in multiple, distinct spectral bands.
• To validate the design through experimental measurements and simulations.

Main Methods:

• Utilizing molecular beam epitaxy (MBE) for precise layer deposition.
• Designing a multi-layer GaAs/AlAs heterostructure.
• Characterizing reflectivity spectra using optical measurements.
• Comparing experimental data with optical simulations.

Main Results:

• Successful growth of a GaAs/AlAs Bragg mirror.
• Demonstrated high reflectivity across four distinct spectral bands.
• Excellent agreement observed between measured and simulated reflectivity spectra.

Conclusions:

• The designed GaAs/AlAs Bragg mirror effectively achieves high reflectivity.
• Molecular beam epitaxy is a suitable technique for fabricating such multi-band mirrors.
• The results validate the theoretical design and simulation models for multi-band Bragg reflectors.