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Updated: Jun 19, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

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Spin polarized conductance in hybrid graphene nanoribbons using 5-7 defects

Andrés R Botello-Méndez1, Eduardo Cruz-Silva, Florentino López-Urías

  • 1Laboratory for Nanoscience and Nanotechnology Research & Advanced Materials Department, IPICYT, Camino a la Presa San José 2055, San Luis Potosi, Mexico.

ACS Nano
|October 30, 2009
PubMed

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