Formation and characterization of sub-nanometer scale cF8 Ge precipitates in Si-based amorphous matrix

Sub-nanometer size cF8 Ge clusters are found to be homogeneously distributed within the Si-Mn amorphous matrix of the SiGeMn thin films deposited by sputtering technique on silicon substrate. The existence of such clusters is observed by XRD and TEM. The electrical conduction in such a composite film seems to be governed by the variable range hopping. Such a two-phase semiconductive composite material with nearly atomic-scale phase separation may be considered as a suitable functional material for nano-electronics and nano-electromechanical systems.