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Updated: Jun 18, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Formation of interconnects with carbon nanotubes by nano-patterning and acoustics-assisted alignment
Kai Yang Ang1, Kui Yao, Yifan Chen
1Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 3 Research Link, Singapore 117602.
Abstract:
In this work, the feasibility of self-assembling double-walled carbon nanotubes (DWCNTs) to form nano-sized interconnects over pre-fabricated gold electrodes using a combination of nanopatterning, surface functionalization and acoustics-assisted alignment of the DWCNTs was studied. Self-assembly and concurrent alignment of DWCNTs over the gold electrodes on selectively functionalized surfaces within nano-patterns took place in a fluid medium with the potential scalability for wafer-sized mass production. The adverse impacts of curvature and misalignment of DWCNTs on the chance of their attachment to the target zones were analyzed. Microscopic observations and electrical I-V curve measurements verified that DWCNT interconnects were indeed formed. The results indicated that the fabrication of self-assembled interconnects through the combined usage of nano-patterning, surface functionalization and DWCNT alignment is feasible and is in the right direction towards the fabrication of interconnects for future carbon nanotube-based devices and circuits.

