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Updated: Jun 18, 2026

Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films
Published on: May 11, 2019
Low-temperature solution-based growth of ZnO nanorods and thin films on Si substrates
Mi-Jin Jin1, Sam-Dong Lee, Kyung-Sik Shin
1School of Advanced Materials and System Engineering, Kumoh National Institute of Technology, Gumi, Gyeongbuk 730-701, Korea.
Abstract:
ZnO nanorods and thin films were synthesized on Si(100) substrates at a low temperature by controlling the ZnO seed formation in an aqueous solution process. Vertically well-aligned ZnO nanorods with a single-crystalline hexagonal structure and c-axis growth orientation were obtained despite having a different crystal structure than a large lattice mismatch with the Si(100) substrate. In addition, the authors suggest that the lateral growth of ZnO nanorods causes them to merge together into ZnO thin films during growth into the aqueous solution. It is also suggested that the significant blueshift of the main emission band in the photoluminescence spectrum obtained from the nanorod sample at 10 K can be mainly attributed to Burstein-Moss effects in the ZnO nanorods.
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