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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Silicon dioxide embedded germanium nanocrystals grown using molecular beam epitaxy for floating gate memory devices
S Das1, R K Singha, K Das
1Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721302, India.
Journal of Nanoscience and Nanotechnology
|November 26, 2009
Summary
This study fabricated silicon dioxide/germanium nanocrystal/silicon dioxide memory structures. The research confirmed net electron trapping in germanium nanocrystals, crucial for advanced memory devices.
Area of Science:
- Materials Science
- Nanotechnology
- Electrical Engineering
Background:
- Self-assembled SiGe nanoislands are grown using molecular beam epitaxy.
- Trilayer memory structures (SiO2/Ge nanocrystals/SiO2) are fabricated via oxidation and annealing.
Purpose of the Study:
- To investigate the optical and charge storage properties of fabricated trilayer memory structures.
- To understand the electron trapping mechanisms within germanium nanocrystals.
Main Methods:
- Fabrication of SiO2/Ge nanocrystals/SiO2 trilayer structures.
- Characterization using Raman spectroscopy for optical properties.
- Capacitance-voltage (C-V) measurements for charge storage analysis.
- Frequency-dependent device measurements.
Main Results:
- An anti-clockwise hysteresis in C-V characteristics was observed, indicating net electron trapping.
- Germanium nanocrystals act as effective charge storage nodes in the floating gate.
- Frequency-dependent analysis ruled out interface defects and deep traps as dominant factors in charging/discharging.
Conclusions:
- The fabricated SiO2/Ge nanocrystals/SiO2 structure exhibits promising charge storage capabilities.
- Net electron trapping in germanium nanocrystals is confirmed as the primary mechanism for memory operation.
- The results suggest a viable pathway for developing novel non-volatile memory devices.
