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Updated: Jun 18, 2026

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

Bragg reflection waveguide diode lasers.

Bhavin J Bijlani¹, Amr S Helmy

¹Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto,10 King's College Road, Toronto, Ontario M5S3G4, Canada.

|December 3, 2009

Summary

This summary is machine-generated.

This study presents the first edge-emitting Bragg reflection waveguide laser. It demonstrates single-transverse mode operation with low thresholds and measures propagation losses for this novel laser design.

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Area of Science:

Optoelectronics
Semiconductor Lasers
Waveguide Photonics

Background:

Bragg reflection waveguide lasers offer potential for high-performance optical devices.
Efficiently confining and guiding light within semiconductor structures is crucial for laser development.

Purpose of the Study:

To demonstrate the first edge-emitting Bragg reflection waveguide laser.
To characterize its single-transverse mode operation and propagation losses.

Main Methods:

Utilized Indium Gallium Arsenide (InGaAs) quantum wells emitting at 980 nm.
Employed Aluminum Gallium Arsenide (Al(x)Ga(1-x)As) for core and cladding layers.
Designed a low-index core (700 nm width) for large mode volume and mode discrimination.

Main Results:

Achieved single-transverse mode operation with low thresholds as 157 A/cm(2).
Measured propagation losses of the fundamental photonic bandgap mode at 11.4 cm(-1).
Demonstrated strong discrimination against unwanted modes due to the waveguide design.

Conclusions:

The successful demonstration of this edge-emitting Bragg reflection waveguide laser opens new avenues for integrated optoelectronics.
The achieved low thresholds and measured propagation losses highlight the potential of this laser architecture for future applications.