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Related Concept Videos

Photoelectric Effect02:26

Photoelectric Effect

When light of a particular wavelength strikes a metal surface, electrons are emitted. This is called the photoelectric effect. The minimum frequency of light that can cause such emission of electrons is called the threshold frequency, which is specific to the metal. Light with a frequency lower than the threshold frequency, even if it is of high intensity, cannot initiate the emission of electrons. However, when the frequency is higher than the threshold value, the number of electrons ejected...
Joule-Thomson Effect01:21

Joule-Thomson Effect

The Joule-Thomson effect, also known as the Joule-Kelvin effect, describes the temperature change of a fluid when it is forced through a valve or porous plug while keeping it in a thermally insulated environment. This experiment is called a throttling process. This is an important effect widely used in refrigeration and the liquefaction of gases.
This experiment forces high-pressure gas through a throttle valve or a porous plug to a lower-pressure region. The gas expands as it passes through to...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Related Experiment Video

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Asymmetric Thermoelectrochemical Cell for Harvesting Low-grade Heat under Isothermal Operation
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Published on: February 5, 2020

Photo-thermoelectric effect at a graphene interface junction.

Xiaodong Xu1, Nathaniel M Gabor, Jonathan S Alden

  • 1Center For Nanoscale Systems, Cornell University,Ithaca, New York 14853, USA.

Nano Letters
|December 30, 2009
PubMed
Summary
This summary is machine-generated.

Photocurrent microscopy reveals a photothermoelectric effect in graphene junctions. This effect significantly increases at cryogenic temperatures, indicating unique thermal properties of graphene at low temperatures.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Optoelectronics

Background:

  • Graphene's unique electronic properties make it a promising material for optoelectronic applications.
  • Understanding the interplay between light, heat, and charge transport in graphene is crucial for device development.

Purpose of the Study:

  • To investigate the optoelectronic response of a graphene single-bilayer interface junction.
  • To elucidate the mechanism behind photocurrent generation in these junctions.
  • To explore the temperature dependence of the photocurrent and infer thermal properties of graphene.

Main Methods:

  • Utilized photocurrent (PC) microscopy to probe the graphene junction.
  • Varied the Fermi level by tuning a gate voltage.
  • Conducted temperature-dependent measurements from room temperature down to cryogenic levels.

Main Results:

  • Identified the photothermoelectric effect as the dominant mechanism for PC generation.
  • Observed a significant increase (approximately 10-fold) in PC at cryogenic temperatures compared to room temperature.
  • Inferred a T(1.5) dependence for graphene's thermal conductivity below 100 K, aligning with theoretical predictions.

Conclusions:

  • The photothermoelectric effect is a key factor in the optoelectronic response of graphene junctions.
  • Graphene exhibits distinct thermal transport properties at low temperatures, as evidenced by the temperature-dependent PC.
  • The findings support theoretical models of graphene's thermal conductivity and highlight its potential for low-temperature optoelectronic devices.