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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
G P Lansbergen1, G C Tettamanzi, J Verduijn
1Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands. g.p.lansbergen@tudelft.nl
Researchers observed the Kondo effect in a single atom using a gate-tunable silicon device. This allows electrical control over the exotic valley Kondo effect and its ground state symmetry.
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