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Updated: Jun 17, 2026

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
Published on: May 29, 2018
Structure and defect characterization of multiferroic ReMnO(3) films and multilayers by TEM
Neerushana Jehanathan1, Oleg Lebedev, Isabelle Gélard
1Electron Microscopy for Materials Research (EMAT), University of Antwerp, Groenenborgerlaan 171, B2020 Antwerpen, Belgium.
Epitaxial rare earth manganite thin films grown by MOCVD exhibit nanodomains and inclusions influenced by substrate orientation and film thickness. Atomic growth models explain interface defect formation in these advanced materials.
Area of Science:
- Materials Science
- Solid State Physics
- Thin Film Technology
Background:
- Rare earth manganite (ReMnO3) thin films and multilayers are crucial for advanced electronic applications.
- Controlling epitaxial growth and understanding defect formation are key challenges in ReMnO3 thin film fabrication.
Purpose of the Study:
- To investigate the structural properties of epitaxial ReMnO3 thin films and multilayers grown on different substrates.
- To analyze the influence of substrate misorientation, film thickness, and substrate type on defect formation.
- To propose and verify atomic growth models for the film/substrate interface.
Main Methods:
- Liquid injection metal organic chemical vapor deposition (MOCVD) for film and multilayer growth.
- Electron diffraction (ED) and high-resolution transmission electron microscopy (HRTEM) for structural characterization.
- Computer simulations to verify atomic growth models.
Main Results:
- Observed nanodomains of secondary orientation in hexagonal YMnO3 films, linked to substrate misorientation.
- Identified TbO2 and Er2O3 inclusions in TbMnO3 and ErMnO3 films, respectively, with structures related to film and substrate symmetry.
- Demonstrated that substrate type influences defect formation in YMnO3/HoMnO3 and YMnO3/ErMnO3 multilayers.
Conclusions:
- Epitaxial growth of ReMnO3 films is sensitive to substrate properties and deposition conditions.
- Atomic growth models provide insights into the interface structure and defect mechanisms.
- Understanding these relationships is vital for optimizing ReMnO3 thin films for technological applications.
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