Ultrahigh field emission current density from nitrogen-implanted ZnO nanowires

Area of Science:

• Materials Science
• Nanotechnology
• Physics

Background:

• Zinc oxide (ZnO) nanowires are promising for electron emission applications.
• Improving field emission properties of ZnO nanowires is crucial for technological advancement.

Purpose of the Study:

• To investigate the effect of nitrogen implantation on the field emission properties of ZnO nanowires.
• To understand the mechanisms behind the enhanced field emission.

Main Methods:

• Nitrogen implantation into ZnO nanowires.
• Characterization of nitrogen doping signals.
• Evaluation of field emission properties, including turn-on field and current density.

Main Results:

• Achieved an ultrahigh field emission current density of 10.3 mA cm(-2).
• Observed a lower turn-on field and significantly higher current density after nitrogen implantation.
• Identified removal of amorphous layers, nanoscale protuberances, and surface defects as key factors for enhancement.

Conclusions:

• Nitrogen implantation dramatically improves the field emission performance of ZnO nanowires.
• The enhanced properties are attributed to structural and surface modifications.
• This research paves the way for practical applications in displays and electron sources.