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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Facile chemical solution deposition of high-mobility epitaxial germanium films on silicon

Guifu Zou1, Hongmei Luo, Filip Ronning

  • 1Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA. gfzou@lanl.gov

Angewandte Chemie (International Ed. in English)
|February 9, 2010
PubMed
Abstract

No abstract available in PubMed .

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