Application de la méthode des GETS à la préparation de films minces monocristallins de TGS et TGSe deutériés pour...

The GETS method (germination epitaxique dans des trous submicroscopiques) needs only a drop of TGS or TGSe solution in heavy water to give a single crystal film. The thickness e (e approximately 1 microm) is perfectly suited for mid-ir spectroscopy with polarized radiations. New lines are observed. In opposition to previous studies, there is no observation of lines disappearing at the Curie temperature, but several lines are continuously broadening when the temperature is increased from 80 K to 300 K.