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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Emerging photoluminescence in monolayer MoS2
Andrea Splendiani1, Liang Sun, Yuanbo Zhang
1Physics Department, University of California at Berkeley, Berkeley, California 94720, USA.
Nano Letters
|March 17, 2010
Summary
Thinning molybdenum disulfide (MoS2) from bulk to monolayer dramatically alters its electronic properties, inducing a direct bandgap and strong photoluminescence due to quantum confinement effects in this nanomaterial.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Bulk molybdenum disulfide (MoS2) is a semiconductor with an indirect bandgap and minimal photoluminescence.
- Low-dimensional nanomaterials exhibit unique physical phenomena not observed in their bulk counterparts.
Purpose of the Study:
- To investigate the electronic and optical property changes in MoS2 upon reduction to a monolayer.
- To demonstrate the role of quantum confinement in engineering the band structure of layered d-electron materials.
Main Methods:
- Theoretical analysis of electronic band structure.
- Experimental characterization of photoluminescence in MoS2 at different thicknesses.
Main Results:
- A transition from an indirect to a direct bandgap was observed as MoS2 was thinned to a monolayer.
- Monolayer MoS2 exhibited significant photoluminescence, unlike its bulk form.
Conclusions:
- Quantum confinement in layered d-electron systems like MoS2 enables significant modification of electronic properties.
- This nanoscale engineering of electronic structure opens new avenues for materials design and applications.
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