Related Experiment Video
Updated: Jun 14, 2026

Solution-Processed, Surface-Engineered, Polycrystalline CdSe-SnSe Exhibiting Low Thermal Conductivity
Published on: May 17, 2024
Enhancing thermoelectric performance of ternary nanocrystals through adjusting carrier concentration
Yixin Zhao1, Jeffrey S Dyck, Brett M Hernandez
1Center for Chemical Dynamics and Nanomaterials Research, Department of Chemistry, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, Ohio 44106, USA.
Abstract:
The carrier concentration of chemically synthesized Bi(2)Te(3)-based nanocrystals (NCs) is for the first time reported to be adjusted by forming ternary Bi(2-x)Sb(x)Te(3) NCs (x = 0.02, 0.05, 0.10, 0.20, 0.50, and 1.50) through partial substitution of Bi with Sb. Carrier concentrations of ternary Bi(2-x)Sb(x)Te(3) NCs were successfully adjusted by a factor of more than 10 controlled by the stoichiometric partial Sb/Bi substitution level. The power factors of the stoichiometric ternary Bi(2-x)Sb(x)Te(3) NCs improved three times compared to the parent Bi(2)Te(3) due to the carrier concentration adjustment.
Related Concept Videos
Types of Semiconductors
Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Carrier Generation and Recombination
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
