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Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

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Transition between electron localization and antilocalization in graphene.

F V Tikhonenko¹, A A Kozikov, A K Savchenko

¹School of Physics, University of Exeter, EX4 4QL Exeter, United Kingdom.

Physical Review Letters

|April 7, 2010

Summary

This summary is machine-generated.

Quantum interference in graphene causes antilocalization, observed as negative magnetoconductance. This effect transitions with carrier density and temperature, persisting up to 200 K due to weak electron-phonon scattering.

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Area of Science:

Condensed matter physics
Quantum mechanics
Materials science

Background:

Quantum interference significantly impacts charge carrier behavior in materials.
Understanding electron transport in graphene is crucial for next-generation electronics.
Localization and antilocalization phenomena are key to characterizing quantum transport.

Purpose of the Study:

To investigate quantum interference effects on charge carriers in graphene.
To identify conditions leading to weak localization versus antilocalization.
To determine the temperature stability of quantum interference in graphene.

Main Methods:

Experimental measurement of conductance in graphene.
Application of magnetic fields to observe magnetoconductance.
Systematic variation of carrier density and temperature.

Main Results:

Quantum interference in graphene leads to antilocalization, evidenced by negative magnetoconductance.
Both weak localization and antilocalization were observed, tunable by experimental conditions.
A transition from localization to antilocalization occurs with decreased carrier density and increased temperature.
Quantum interference effects were observed to persist up to approximately 200 K.

Conclusions:

Quantum interference in graphene exhibits tunable localization and antilocalization behaviors.
Carrier density and temperature are critical parameters controlling the transition between localization regimes.
Weak electron-phonon scattering allows quantum interference phenomena in graphene to survive at high temperatures.