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Updated: Jun 14, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Comment on "Formation of large voids in the amorphous phase-change memory Ge2Sb2Te5 alloy"

P Jóvári, I Kaban, S Kohara

    Physical Review Letters
    |April 7, 2010
    PubMed
    Abstract

    No abstract available in PubMed .

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