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Roughness induced backscattering in optical silicon waveguides.

Francesco Morichetti1, Antonio Canciamilla, Carlo Ferrari

  • 1Policom-DEI, Politecnico di Milano, Via Colombo 81, 20133 Milano, Italy. morichetti@elet.polimi.it

Physical Review Letters
|April 7, 2010
PubMed
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Sidewall roughness in optical waveguides causes backscattering, limiting performance in silicon photonics. This study quanties this effect and its impact on waveguide parameters.

Area of Science:

  • Photonics
  • Materials Science
  • Optical Engineering

Background:

  • High-index-contrast optical waveguides are crucial for integrated photonics.
  • Total internal reflection is the guiding principle in these waveguides.
  • Sidewall imperfections can significantly affect optical performance.

Purpose of the Study:

  • To directly observe and quantify backscattering caused by sidewall roughness in optical waveguides.
  • To identify backscattering as a major limiting factor in silicon-on-insulator nanowires.
  • To establish the relationship between backscattering and waveguide properties.

Main Methods:

  • Direct observation of backscattering phenomena.
  • Analysis of silicon-on-insulator nanowires.

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Last Updated: Jun 14, 2026

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  • Derivation of theoretical relationships between backscattering and waveguide parameters.

    • Main Results:

    • Backscattering induced by sidewall roughness was directly observed.
    • Backscattering is identified as a severe limitation in silicon-on-insulator nanowires for integrated photonics.
    • General relationships between backscattering and geometrical/optical parameters were derived.
    • The influence of roughness on polarization rotation and higher-order mode coupling was demonstrated.

    Conclusions:

    • Sidewall roughness is a critical factor impacting the performance of optical waveguides.
    • Understanding and mitigating backscattering is essential for advancing densely integrated photonics.
    • The derived relationships provide a basis for designing improved optical waveguide structures.