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Multiple angle ellipsometric analysis of surface layers and surface layer contaminants.

M E Pedinoff, O M Stafsudd

    Applied Optics
    |April 8, 2010
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    Summary

    A multiple angle ellipsometric method accurately measures optical constants (N and K) for thin films and contaminant layers on various substrates. This technique is valuable for evaluating optical and semiconductor materials with known, partially transparent layers.

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    Area of Science:

    • Materials Science
    • Optical Physics
    • Surface Science

    Background:

    • Accurate characterization of thin films and surface contaminants is crucial for optical and semiconductor industries.
    • Traditional methods may struggle with complex multilayered samples or identifying unknown contaminants.

    Purpose of the Study:

    • To present a multiple angle ellipsometric method for precise optical constant (N and K) determination.
    • To demonstrate the method's applicability to diverse substrate-film and substrate-contaminant systems.

    Main Methods:

    • Utilized multiple angle ellipsometry to analyze optical properties.
    • Evaluated fundamental optical constants (refractive index N and extinction coefficient K).
    • Applied the method to samples including silicon oxide, silicon nitride, and contaminant layers.

    Main Results:

    • Successfully measured optical constants for various thin film and contaminant layers.
    • Demonstrated applicability to silicon-based substrates and gallium arsenide.
    • Validated the method for partially transparent layers in known multilayer structures.

    Conclusions:

    • Multiple angle ellipsometry provides a robust method for characterizing thin films and contaminants.
    • The technique is suitable for quality control and research in optical and semiconductor fabrication.
    • Accurate optical constant data is essential for predicting and optimizing device performance.