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Structural transition in indium phosphide nanowires.

Yusuke Kitauchi¹, Yasunori Kobayashi, Katsuhiro Tomioka

¹Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Sappoo, Japan.

|April 15, 2010

Summary

This summary is machine-generated.

Catalyst-free growth of Indium Phosphide (InP) nanowires using selective-area metalorganic vapor phase epitaxy (SA-MOVPE) revealed crystal structure transitions. These transitions depend on growth conditions and affect nanowire morphology and properties.

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Area of Science:

Materials Science
Nanotechnology
Semiconductor Physics

Background:

Indium Phosphide (InP) nanowires are crucial for advanced electronic and optoelectronic devices.
Controlling crystal structure in nanowire growth is essential for tailored material properties.

Purpose of the Study:

To investigate the catalyst-free growth of InP nanowires via selective-area metalorganic vapor phase epitaxy (SA-MOVPE).
To understand the influence of growth conditions on InP nanowire crystal structure and morphology.
To develop a model explaining the observed crystal structure transitions.

Main Methods:

Catalyst-free selective-area metalorganic vapor phase epitaxy (SA-MOVPE) on InP substrates.
Controlled variation of growth parameters to induce crystal structure transitions.
Characterization of nanowire morphology, crystal structure, and optical properties (photoluminescence).

Main Results:

Uniform arrays of InP nanowires with hexagonal cross-sections and minimal tapering were achieved.
Two distinct growth conditions resulted in InP nanowires with different crystal structures.
Variations in hexagonal orientation and size were observed, correlating with growth behavior.
A model explaining crystal structure transition based on surface atomic arrangements was proposed.
Crystal structure transition was observed in nanowires up to 1 micrometer in diameter.

Conclusions:

Growth conditions significantly influence the crystal structure of catalyst-free InP nanowires.
The study provides insights into controlling InP nanowire crystallography for device applications.
The developed model aids in understanding and predicting crystal structure evolution in nanowire growth.