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Automatic Laser-based Geometry Capture for Finite Element Analysis of Weld Beads
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Reflectometer-based metrology for high-aspect ratio via measurement.

Yi-Sha Ku1, Fu Shiang Yang

  • 1Center for Measurement Standards, ITRI Bldg. 12, 321 Sec. 2, Kuang Fu Rd., Hsinchu, Taiwan. yku@itri.org.tw

Optics Express
|April 15, 2010
PubMed
Summary

We developed a new method for inspecting deep via structures using spectral reflectometry. This non-destructive technique accurately measures tiny via dimensions and profiles for 3D interconnects.

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Area of Science:

  • Materials Science
  • Semiconductor Manufacturing
  • Optical Metrology

Background:

  • Accurate metrology is crucial for advanced semiconductor manufacturing, especially for 3D interconnects.
  • Through-silicon vias (TSVs) are critical components in 3D integrated circuits, requiring precise dimensional control.
  • Existing metrology methods for TSVs face limitations in accuracy and non-destructive capabilities.

Purpose of the Study:

  • To develop an enhanced spectral reflectometry method for non-destructive TSV inspection.
  • To improve the accuracy of measuring TSV profile diameters and aspect ratios.
  • To enable precise characterization of via bottom profiles.

Main Methods:

  • Modification of a thin film model to adjust illuminated surface area ratios for reflectivity calculations.

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  • Integration of a half oblate spheroid model with a reflectance modulation algorithm.
  • Implementation of a novel theoretical model and measurement algorithm within a spectral reflectometer.
  • Application of the developed metrology to actual 3D interconnect processing wafers.

    • Main Results:

    • Accurate reflectivity calculations for deep via structures.
    • Successful extraction of via bottom profiles from measured reflectance spectra.
    • Non-destructive measurement of TSV profile diameters down to 5 micrometers.
    • Measurement of TSVs with aspect ratios exceeding 13:1.
    • Achieved measurement precision within 0.02 micrometers.

    Conclusions:

    • The enhanced spectral reflectometry method provides a powerful non-destructive solution for TSV inspection.
    • The developed model and algorithm enable precise measurement of critical TSV dimensions.
    • This technique is suitable for quality control in advanced 3D interconnect processing.