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Related Concept Videos

Ionic Crystal Structures02:42

Ionic Crystal Structures

Ionic crystals consist of two or more different kinds of ions that usually have different sizes. The packing of these ions into a crystal structure is more complex than the packing of metal atoms that are the same size.
Most monatomic ions behave as charged spheres, and their attraction for ions of opposite charge is the same in every direction. Consequently, stable structures for ionic compounds result (1) when ions of one charge are surrounded by as many ions as possible of the opposite...
Imperfections in Crystal Structure: Non-Stoichiometric Defects01:29

Imperfections in Crystal Structure: Non-Stoichiometric Defects

Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
Network Covalent Solids02:18

Network Covalent Solids

Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Imperfections in Crystal Structure: Point, Line and Plane Defects01:25

Imperfections in Crystal Structure: Point, Line and Plane Defects

A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...

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Related Experiment Video

Updated: Jun 13, 2026

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition
07:37

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition

Published on: December 21, 2015

Crystalline oxides on silicon.

James W Reiner1, Alexie M Kolpak, Yaron Segal

  • 1Yale University, New Haven, CT 06520-8284, USA.

Advanced Materials (Deerfield Beach, Fla.)
|May 1, 2010
PubMed
Summary
This summary is machine-generated.

This review details growing crystalline oxides on silicon for advanced electronics. Atomic layer deposition and molecular beam epitaxy enable precise interface construction, linking structure to function.

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Fabrication and Optimization of Type II Silicon Clathrate Films
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Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition
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Fabrication and Optimization of Type II Silicon Clathrate Films
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Fabrication and Optimization of Type II Silicon Clathrate Films

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Semiconductor Technology

Background:

  • Silicon is a foundational semiconductor material.
  • Integrating complex oxides with silicon is crucial for next-generation electronics and photonics.
  • Conventional deposition methods face challenges in achieving high-quality oxide-silicon interfaces.

Purpose of the Study:

  • To review advancements in crystalline oxide growth on silicon.
  • To explore the integration of multifunctional complex oxides with semiconductor technology.
  • To detail the science and technology of constructing the oxide-silicon interface.

Main Methods:

  • Review of conventional oxide epitaxy techniques.
  • Detailed description of atomic layer-by-layer deposition using molecular beam epitaxy (MBE).
  • Interdisciplinary approach combining MBE, advanced structural characterization, and first-principles theory.

Main Results:

  • Systematic construction of the oxide-silicon interface is achieved.
  • A detailed understanding of interface formation, structure, and property relationships is established.
  • The link between interface structure and material functionality is elucidated.

Conclusions:

  • Successful integration of crystalline oxides on silicon is demonstrated.
  • The developed methods provide a pathway for novel electronic and photonic devices.
  • Understanding the oxide-silicon interface is key to unlocking new functionalities.