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A memristor-based nonvolatile latch circuit.

Warren Robinett1, Matthew Pickett, Julien Borghetti

  • 1Hewlett Packard Labs, Palo Alto, CA, USA.

Nanotechnology
|May 18, 2010
PubMed
Summary
This summary is machine-generated.

Researchers created a nonvolatile flip-flop circuit using memristors for reliable data storage during power loss. This memristor-based memory challenges traditional hierarchies, enabling faster, smaller nonvolatile computation for devices with intermittent power.

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Computer Science

Background:

  • Memristive devices offer history-dependent conductance states for nonvolatile memory.
  • Traditional memory hierarchies lack fine-grained, fast nonvolatile elements integrated with logic.

Purpose of the Study:

  • To implement and test a nonvolatile synchronous flip-flop circuit using a nanoscale memristor.
  • To demonstrate the feasibility of integrating memristors with CMOS circuitry for nonvolatile computation.

Main Methods:

  • Implementation of a synchronous flip-flop circuit incorporating a nanoscale memristive device.
  • Controlled testing involving repeated power loss events to assess state storage and restoration.

Main Results:

  • Successful state storage and restoration demonstrated in the memristor-based flip-flop circuit.
  • Achieved a low error rate of 0.1% over 1000 power loss cycles.
  • Showcased the compatibility of memristors with complementary metal-oxide-semiconductor (CMOS) electronics.

Conclusions:

  • Memristor-CMOS integration enables nonvolatile computation, particularly for power-intermittent platforms.
  • This approach challenges the conventional memory hierarchy by offering fast, small, and integrated nonvolatile memory cells.
  • Opens new architectural possibilities beyond the traditional memory hierarchy.