Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Electric Field of Parallel Conducting Plates01:16

Electric Field of Parallel Conducting Plates

Gauss' law relates the electric flux through a closed surface to the net charge enclosed by that surface. Gauss's law can be applied to find the electric field and the charge enclosed in a region depending on its charge distribution.
Consider a cross-section of a thin, infinite conducting plate having a positive charge. For such a large thin plate, as the thickness of the plate tends to zero, the positive charges lie on the plate's two large faces. Without an external electric field, the...
Debye–Huckel–Onsager Conductance Equation01:28

Debye–Huckel–Onsager Conductance Equation

The Debye-Hückel-Onsager equation is a cornerstone of physical chemistry, providing a method to determine the molar conductance (Λm) and molar conductance at infinite dilution (Λ°m) for uni-univalent electrolytes.Uni-univalent electrolytes are electrolytes that dissociate in solution to produce one cation with a +1 charge and one anion with a –1 charge per formula unit.This equation addresses two crucial phenomena: the asymmetry effect and the electrophoretic effect. According to this equation,...
Potential Due to a Polarized Object01:29

Potential Due to a Polarized Object

A neutral atom consists of a positively charged nucleus surrounded by a negatively charged electron cloud. When placed in an external electric field, the external electric force pulls the electrons and nucleus apart, opposite to the intrinsic attraction between the nucleus and the electrons. The opposing forces balance each other with a slight shift between the center of masses of the nucleus and the electron cloud, resulting in a polarized atom. On the other hand, a few molecules, like water,...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Confinement-deconfinement transition due to spontaneous symmetry breaking in quantum Hall bilayers.

Nature communications·2016
Same author

Localized states due to expulsion of resonant impurity levels from the continuum in bilayer graphene.

Physical review letters·2013
Same author

Intersubband edge singularity in metallic nanotubes.

Physical review letters·2011
Same author

Peierls-type instability and tunable band gap in functionalized graphene.

Physical review letters·2010
Same author

Dynamic conductivity in graphene beyond linear response.

Physical review letters·2010
Same author

Mesoscopic spin-hall effect in 2D electron systems with smooth boundaries.

Physical review letters·2009
Same journal

Erratum: Bacterial Turbulence at Compressible Fluid Interfaces [Phys. Rev. Lett. 136, 138301 (2026)].

Physical review letters·2026
Same journal

Unveiling Light-Quark Yukawa Flavor Structure via Dihadron Fragmentation at Lepton Colliders.

Physical review letters·2026
Same journal

Adaptable Route to Fast Coherent State Transport via Bang-Bang-Bang Protocols.

Physical review letters·2026
Same journal

Topological Transition and Emergence of Elasticity of Dislocation in Skyrmion Lattice: Beyond Kittel's Magnetic-Polar Analogy.

Physical review letters·2026
Same journal

Pound-Drever-Hall Method for Superconducting-Qubit Readout.

Physical review letters·2026
Same journal

Coupling a ^{73}Ge Nuclear Spin to an Electrostatically Defined Quantum Dot in Silicon.

Physical review letters·2026
See all related articles

Related Experiment Video

Updated: Jun 12, 2026

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires
09:00

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Published on: December 11, 2013

Guided plasmons in graphene p-n junctions.

E G Mishchenko1, A V Shytov, P G Silvestrov

  • 1Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112, USA.

Physical Review Letters
|May 21, 2010
PubMed
Summary
This summary is machine-generated.

Researchers developed a theory for guided plasmon modes in graphene, showing their propagation is controllable by electric fields. This discovery highlights graphene

More Related Videos

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Visible-light Induced Reduction of Graphene Oxide Using Plasmonic Nanoparticle
07:24

Visible-light Induced Reduction of Graphene Oxide Using Plasmonic Nanoparticle

Published on: September 22, 2015

Related Experiment Videos

Last Updated: Jun 12, 2026

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires
09:00

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Published on: December 11, 2013

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Visible-light Induced Reduction of Graphene Oxide Using Plasmonic Nanoparticle
07:24

Visible-light Induced Reduction of Graphene Oxide Using Plasmonic Nanoparticle

Published on: September 22, 2015

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Spatial separation of charge carriers in graphene creates unique boundary-confined plasmon waves.
  • Understanding these plasmon modes is crucial for developing advanced optical and electronic devices.

Purpose of the Study:

  • To develop a theoretical framework for guided plasmon modes in graphene's electron-hole liquid.
  • To investigate the control and characteristics of these plasmon modes under external fields.

Main Methods:

  • Hydrodynamic theory of electron-hole liquid.
  • Analysis of plasmon dispersion relations.
  • Investigation of effects of external electric and magnetic fields.

Main Results:

  • A theory for guided plasmon modes in graphene was established.
  • Plasmon dispersion relation found to be omega proportional to q(1/4) for short wavelengths.
  • External electric fields allow control over plasmon frequency, velocity, and direction.
  • Magnetic fields introduce additional gapless magnetoplasmon excitations.

Conclusions:

  • Graphene supports controllable guided plasmon modes.
  • The unique dispersion and controllability make graphene a promising material for nanoplasmonics applications.