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Updated: Jun 12, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Prospects for 3D imaging of dopant atoms in ceramic interfaces
Scott D Findlay1, Naoya Shibata, Shinya Azuma
1Institute of Engineering Innovation, School of Engineering, The University of Tokyo, Bunkyo, Tokyo, Japan. scott@sigma.t.u-tokyo.ac.jp
Abstract:
Expanding upon recent experimental results for a Y-doped Sigma13 alpha-Al(2)O(3) grain boundary, we explore through simulation the extent to which plan-view imaging of buried interfaces may be possible (cf. the more usual cross-section imaging). As we show in detail, that case was significantly aided by the normal to the interface plane being a high-order zone axis orientation, giving the visibility of the Y atoms a remarkable insensitivity to the specimen thickness and the depth of the interface plane. The visibility along lower order zone axis orientations and the visibility of different dopant species are discussed.

