Transparent conducting indium doped ZnO films by dc reactive S-gun magnetron sputtering

Transparent conducting ZnO films have been prepared by modified S-gun reactive dc magnetron sputtering using an indium doped Zn target. Films with a resistivity of 1.08 x 10(-3) Omega cm and average transmittance of over 80% in the visible region were obtained. The influence of indium content at the surface of Zn target on the resistivity and transmittance of ZnO films was investigated. Optical properties of ZnO films in the 0.2-2.5-microm range were modeled by the Drude theory of free electrons. The reflectance of ZnO films in the 2.5-26.0-microm region was calculated.