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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Updated: Jun 12, 2026

Well-aligned Vertically Oriented ZnO Nanorod Arrays and their Application in Inverted Small Molecule Solar Cells

Well-aligned Vertically Oriented ZnO Nanorod Arrays and their Application in Inverted Small Molecule Solar Cells

Published on: April 25, 2018

Novel nanowire array based highly efficient quantum dot sensitized solar cell.

Minsu Seol¹, Heejin Kim, Youngjo Tak

¹Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea.

Chemical Communications (Cambridge, England)

|June 24, 2010

Summary

A novel cadmium selenide/cadmium sulfide/zinc oxide nanowire array was developed for quantum dot sensitized solar cells. This photoanode achieved a 4.15% power conversion efficiency, advancing solar energy technology.

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Area of Science:

Materials Science
Nanotechnology
Renewable Energy

Background:

Quantum dot sensitized solar cells (QDSSCs) offer a promising avenue for renewable energy.
Developing efficient photoanodes is crucial for enhancing QDSSC performance.

Purpose of the Study:

To fabricate and characterize a novel CdSe/CdS/ZnO nanowire array for use as a photoanode in QDSSCs.
To evaluate the photovoltaic performance of the fabricated photoanode.

Main Methods:

A three-step, solution-based method was employed for the fabrication of the CdSe/CdS/ZnO nanowire array.
The fabricated nanowire array was utilized as the photoanode in a quantum dot sensitized solar cell configuration.

Main Results:

The novel CdSe/CdS/ZnO nanowire array photoanode was successfully synthesized.
The quantum dot sensitized solar cell incorporating this photoanode achieved a maximum power conversion efficiency of 4.15%.

Conclusions:

The developed CdSe/CdS/ZnO nanowire array represents a viable and effective photoanode material for QDSSCs.
The solution-based fabrication method offers a scalable approach for producing efficient solar cell components.