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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...

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Related Experiment Video

Updated: Jun 12, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Flexible organic transistor memory devices.

Soo-Jin Kim1, Jang-Sik Lee

  • 1School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, Republic of Korea.

Nano Letters
|June 29, 2010
PubMed
Summary

Researchers developed flexible organic memory devices using gold nanoparticles (Au(NP)) on plastic substrates. These devices show reliable performance and mechanical stability, suitable for advanced flexible electronics.

Area of Science:

  • Materials Science
  • Organic Electronics
  • Nanotechnology

Background:

  • Flexible electronics require robust and reliable memory components.
  • Organic thin-film transistors (OTFTs) offer a versatile platform for flexible devices.
  • Integrating nanoparticles can enhance the performance of organic electronic devices.

Purpose of the Study:

  • To develop flexible nonvolatile organic memory devices on plastic substrates.
  • To investigate the memory characteristics and reliability of these devices.
  • To assess the potential application in advanced flexible electronic systems.

Main Methods:

  • Fabrication of organic memory devices using solution-processed organic dielectric layers and low-temperature processed organic transistors.
  • Embedding self-assembled gold nanoparticles (Au(NP)) within organic thin-film transistors.

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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

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06:21

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles

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Related Experiment Videos

Last Updated: Jun 12, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

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A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles
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  • Characterization of memory properties including program/erase operations, threshold voltage shifts, endurance, data retention, and bending tests.

    • Main Results:

    • The developed organic memory devices demonstrated good programmable memory characteristics.
    • Controllable and reliable threshold voltage shifts were observed during program/erase operations.
    • Flexible memory devices exhibited excellent electrical reliability and mechanical stability, confirmed by endurance, data retention, and bending cyclic measurements.

    Conclusions:

    • The developed flexible organic memory devices show promising performance for nonvolatile memory applications.
    • The integration of gold nanoparticles (Au(NP)) enhances the electrical reliability and mechanical stability of the devices.
    • This approach holds potential for the advancement of integrated organic circuits and flexible/plastic electronic devices.